Organic light emitting display device and method for manufacturing the same

ABSTRACT

An organic light emitting diode (OLED) display includes a substrate where a plurality of pixels are formed, a first pixel defining layer on the substrate, the first pixel defining layer dividing the plurality of pixels, a connection wire on the first pixel defining layer, the connection wire electrically connecting two adjacent pixels, and a second pixel defining layer on the first pixel defining layer, the second pixel defining layer covering the connection wire.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to and the benefit of Korean PatentApplication No. 10-2012-0027319 filed in the Korean IntellectualProperty Office on Mar. 16, 2012, the entire contents of which areincorporated herein by reference.

BACKGROUND

The described technology relates generally to an organic light emittingdiode (OLED) display and a manufacturing method thereof.

SUMMARY

Embodiments are directed to an organic light emitting diode (OLED)display, including a substrate having a plurality of pixels, a firstpixel defining layer on the substrate, the first pixel defining layerdividing the plurality of pixels, a connection wire on the first pixeldefining layer, the connection wire electrically connecting two adjacentpixels, and a second pixel defining layer on the first pixel defininglayer, the second pixel defining layer covering the connection wire.

Each of the plurality of pixels may include a pixel electrode and apixel terminal extending from the pixel electrode. The first pixeldefining layer may include one or more connection holes exposingrespective pixel terminals of the two adjacent pixels.

The connection wire may electrically connect the two adjacent pixelsthrough the connection holes.

One of the two adjacent pixels may be a defective pixel and the anotherone of the two adjacent pixels may be a normal pixel. The defectivepixel may be driven by a signal applied to the normal pixel.

A plurality of thin film transistors may be provided between thesubstrate and each pixel terminal to supply a signal for driving eachpixel. The normal pixel of the two adjacent pixels may be electricallyconnected with a respective one of the thin film transistorscorresponding to the normal pixel. The defective pixel of the twoadjacent pixels may be electrically disconnected from a respective onethe thin film transistors corresponding to the defective pixel.

The connection wire may include at least one of tungsten, chromium,molybdenum, aluminum, titanium, and tantalum, or an alloy thereof.

The first pixel defining layer may include a plurality of first openingsto expose each the pixel electrode. The second pixel defining layer mayinclude a plurality of second openings to expose each pixel electrode.

The second pixel defining layer may be disposed to fill the connectionholes.

The second pixel defining layer may be disposed between pixel terminalsof the two adjacent pixels.

Pixel terminals of the two adjacent pixels may be exposed through asingle connection hole. The first pixel defining layer may include afirst portion formed in a connection hole and a second portionrelatively thicker than the first portion.

The second pixel defining layer may cover the first portion. An upperside of the second pixel defining layer and an upper side of the secondportion of the first pixel defining layer may correspond to each other.

Embodiments are also directed to a manufacturing method of an organiclight emitting diode (OLED) display, the manufacturing method includingforming a plurality of pixels and a plurality of thin film transistorselectrically connected to the plurality of pixels, respectively, on asubstrate, forming a first pixel defining layer dividing the pluralityof pixels, detecting a defective pixel by testing the plurality ofpixels, disconnecting an electrical connection between the defectivepixel and a respective one of the thin film transistors, forming aconnection wire for electrical connection between the defective pixeland a pixel adjacent to the defective pixel, and forming a second pixeldefining layer on the first pixel defining layer to cover the connectionwire.

The pixels may respectively include pixel electrodes and pixel terminalsextended from the pixel electrodes. The thin film transistors may beelectrically connected with the pixel terminals.

The forming of the connection wire may include forming a connection holeby removing a portion of the first pixel defining layer to expose thedefective pixel and the pixel terminal of the pixel that is adjacent tothe defective pixel.

The forming of the connection wire may include connecting the pixelterminal of the defective pixel and the pixel terminal of the pixel thatis adjacent to the defective pixel with the connection wire through theconnection hole.

The forming of the connection wire may include depositing at least oneof tungsten, chromium, molybdenum, aluminum, titanium, and tantalum, oran alloy thereof using a chemical vapor deposition method.

The disconnecting the electrical connection between the defective pixeland the respective one of the thin film transistors may include cuttingthe electrical connection using a laser.

Each thin film transistor may include a semiconductor layer, a sourceelectrode, and a drain electrode, the source electrode and the drainelectrodes contacting the semiconductor layer. The disconnecting of theelectrical connection between the defective pixel and the respective oneof the thin film transistors includes cutting the source electrode orthe drain electrode.

BRIEF DESCRIPTION OF THE DRAWINGS

Features will become apparent to those of skill in the art by describingin detail exemplary embodiments with reference to the attached drawingsin which:

FIG. 1 illustrates a layout view of a pixel structure of an organiclight emitting diode display according to an exemplary embodiment.

FIG. 2 illustrates a cross-sectional view of FIG. 1, taken along theline II-II.

FIG. 3A to FIG. 3D illustrate cross-sectional views of FIG. 1, takenalong the line and illustrate a process for restoring a failure in amanufacturing process of the OLED display according to the exemplaryembodiment.

FIG. 4 illustrates a cross-sectional view of a part of an OLED displayaccording to another exemplary embodiment.

DETAILED DESCRIPTION

Example embodiments will now be described more fully hereinafter withreference to the accompanying drawings; however, they may be embodied indifferent forms and should not be construed as limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey the scope thereof to those skilled in the art.

Throughout the specification, like reference numerals designate likeelements throughout the specification.

It shall be noted that the drawings are schematic and do not depictexact dimensions. The relative proportions and ratios of elements in thedrawings may be exaggerated or diminished in size for the sake ofclarity and convenience in the drawings, and such arbitrary proportionsare only illustrative and not limiting in any way. Like referencenumerals are used for like structures, elements, or parts shown in twoor more drawings to show similar characteristics. When one part is saidto be “over” or “on” another part, the one part may be directly over theother part or may be accompanied by another part interposedtherebetween.

Exemplary embodiments specifically show preferred exemplary embodiments.As a result, various modifications of the drawings are anticipated.Accordingly, exemplary embodiments are not limited to certain forms ofthe regions illustrated, but may include forms that are modified throughmanufacturing, for example.

Hereinafter, an organic light emitting diode display according to anexemplary embodiment will be described with reference to FIG. 1 and FIG.2.

FIG. 1 is a layout view of a pixel structure of an organic lightemitting diode (OLED) display according to an exemplary embodiment.

As shown in FIG. 1, an OLED display 100 according to the exemplaryembodiment includes a plurality of pixel areas. Each pixel may have a2Tr-1Cap structure with an organic light emitting diode 71, two thinfilm transistors 10 and 20, and a capacitor 90. Here, the term “pixelarea” may refer to a unit area where a pixel, which is a minimum unitfor displaying an image, is formed. However, in other configurations,the pixel may be variously modified.

For example, each pixel are of the OLED display 100 may have a structurein which three or more thin film transistors and two or more capacitorsare provided. In addition, the OLED display 100 may include additionalconnecting lines, such that the OLED display 100 may have variousstructures. At least one of additionally formed thin film transistorsand capacitors may constitute a compensation circuit. The compensationcircuit may improve the uniformity of the OLED 71 formed in the pixelareas PE so as to suppress image quality deviation. The compensationcircuit may include two to eight thin film transistors.

In further detail, in the exemplary embodiment, the OLED display 100 mayinclude a first thin film transistor 10 and a second thin filmtransistor 20 formed in each pixel area. The first thin film transistor10 and the second thin film transistor 20 may respectively include gateelectrodes 153 and 156, active layers 133 and 136, source electrodes 174and 177, and drain electrodes 175 and 178.

A gate line 151, a data line 171, and a common power line 172 may beformed on a substrate 110. Each pixel area may be defined by the gateline 151, the data line 171, and the common power line 172. However, inother implementations, the pixel area may be variously modified. Inaddition, although it is not illustrated, a capacitor line may beadditionally formed on the substrate 110.

A source electrode 174 of the first thin film transistor 10 may beconnected to the data line 171, and a gate electrode 153 of the firstthin film transistor 10 may be connected to the gate line 151. A nodemay be formed between a drain electrode 175 of the first thin filmtransistor 10 and a capacitor 90 such that the drain electrode 175 ofthe first thin film transistor 10 is connected with a first capacitorelectrode 139 of the capacitor 90. A second capacitor electrode 159 maybe connected with the common power line 172. The drain electrode 175 ofthe first thin film transistor 10 may be connected with the gateelectrode 156 of the second thin film transistor 20. The common powerline 172 may be connected to a source electrode 177 of the second thinfilm transistor 20, and an anode of the organic light emitting element70 may be connected to the drain electrode 178.

The organic light emitting element 70 may includes the anode, which maybe a hole injection electrode, a cathode, which may be an electroninjection electrode, and an organic emission layer 720 provided betweenthe anode and the cathode. Meanwhile, according to a driving method,locations of the anode and the cathode of the organic light emittingelement may be switched. Hereinafter, in the exemplary embodiment, theanode is a pixel electrode 710 and the cathode is a common electrode730.

The first thin film transistor 10 may be used as a switch for selectinga pixel area for light emission. When the first thin film transistor 10is instantly turned on, the capacitor 90 is charged, and the amount ofthe charge charged at this time is proportional to the potential of thevoltage applied from the data line 171. In addition, a gate potential ofthe second thin film transistor 20 is increased according to a potentialcharged in the capacitor 90 while the first thin film transistor 10 isin the turned-off state. The second thin film transistor 20 is turned onwhen the gate potential exceeds a threshold voltage. Then, a voltageapplied to the common power line 172 is applied to the organic lightemitting element 71 through the second thin film transistor 20 such thatthe organic light emitting element 71 emits light.

The structure of the pixel PE may be variously modified.

The structure of the OLED display according to the exemplary embodimentwill be described in further detail with reference to FIG. 1 and FIG. 2.

FIG. 2 is a cross-sectional view of FIG. 1, taken along the line II-II.

As shown in FIG. 2, a buffer layer 120 may be formed on the substrate110. The buffer layer 120 may be formed through chemical vapordeposition or physical vapor deposition and may have a single-layeredstructure or a multi-layered structure including various insulatinglayers, such as a silicon oxide film, silicon nitride film, and thelike. The buffer layer 120 may serve to prevent moisture or impuritiesgenerated from the substrate 110 from spreading or infiltrating beyondthe substrate 110. The buffer layer 120 may also smooth the surface ofthe substrate 110, and regulate a heat transfer speed during acrystallization process performed for forming the active layers to thusaccomplish desirable crystallization. The buffer layer 120 may beomitted according to the type and process condition of the substrate110.

The active layers 133 and 136 and the first capacitor electrode 139 maybe formed on the buffer layer 120. An amorphous silicon layer may beformed on the buffer layer 120, crystallized, and then patterned suchthat the active layers 133 and 136 and the first capacitor electrode 139are formed. However, in other implementations, the first capacitorelectrode 139 and the active layer 139 may be formed of differentmaterials, as desired.

A gate insulating layer 140 may be formed on the active layers 133 and136 and the first capacitor electrode 139. In further detail, the gateinsulating layer 140 may be formed to cover the active layers 133 and136 and the first capacitor electrode 139 on the buffer layer 120. Thegate insulating layer 140 may be formed including at least one ofvarious suitable insulation materials, such as tetra ethyl orthosilicate (TEOS), silicon nitride (SiN_(x)), and silicon oxide (SiO₂).

The gate line 151 including gate electrodes 153 and 156 and a secondcapacitor electrode 159 may be formed on the gate insulating layer 140.The gate electrode 153 and 156 may at least partially overlap the activelayers 133 and 136.

An interlayer insulating layer 160 may be formed on the gate insulatinglayer 140 to cover the gate electrodes 153 and 156, the second capacitorelectrode 159, and gate line 151. The gate insulating layer 140 and theinterlayer insulating layer 160 may have through-holes to partiallyexpose the active layers 133 and 136. The interlayer insulating layer160 and the gate insulating layer 140 may be formed of the samematerial.

The data line 171, which may include source electrodes 174 and 177 anddrain electrodes 175 and 178 and the common power line 172, may beformed on the interlayer insulating layer 160. The source electrodes 174and 177 and the drain electrodes 175 and 178 may be connected with theactive layers 133 and 136 through the through-holes formed in theinterlayer insulating layer 160 and the gate insulating layer 140.

As described, the first and second thin film transistors 10 and 20including the active layers 133 and 136, the gate electrodes 153 and156, the source electrodes 174 and 177, and the drain electrodes 175 and178 and the wire portions 210 including the gate line 151, the data line171, the common power line 172, and the capacitor 90 may be formed. Theconfiguration of the wire portion 210 may be variously modified.

A protection insulating layer 180 may be formed on the interlayerinsulating layer 160 to cover the source electrodes 174 and 177, thedrain electrodes 175 and 178, and the data line 171. The protectioninsulating layer 180 may be formed of various suitable materials. Theprotection insulating layer 180 may have a contact hole 182 thatpartially exposes the drain electrode 178 of the second thin filmtransistor 20. The configuration of the protection insulating layer 180may be varied. In other implementations, one of the protectioninsulating layer 180 and the interlayer insulating layer 160 may beomitted or the protection insulating layer 180 may be partially coverthe wire portion 210.

A pixel electrode 710 of the organic light emitting element 71 and apixel terminal 711 extended from the pixel electrode 710 may be formedon the protection insulating layer 180. That is, the OLED display 100may include a plurality of pixel electrodes 710 disposed at a distancefrom each other in each of the plurality of pixel areas. The pixelterminal 711 may be connected with the drain electrode 178 through thecontact hole 182 of the protection insulating layer 180. Theconfigurations of the pixel electrode 710 and the pixel terminal 711 maybe varied. For example, the pixel electrode 710 and the pixel terminal711 may be formed on the interlayer insulating layer 160 or on the gateinsulating layer 140, and the pixel terminal 711 may have asingle-layered or multi-layered structure.

In addition, a first pixel defining layer having a plurality of firstopenings 192 that expose the pixel electrode 710 of each pixel area maybe formed on the protection insulating layer 180. The first pixeldefining layer 190 may be formed of various suitable organic orinorganic materials. For example, the first pixel defining layer 190 maybe formed by patterning a photosensitive organic layer and thermally oroptically baking the patterned photosensitive organic layer.

The organic emission layer 720 may be formed on the pixel electrode 710on the first opening 192 of the first pixel defining layer 190.

The first pixel defining layer 190 may have a connection hole 1901 thatexposes the pixel terminal 711. A connection wire 200 and a second pixeldefining layer 191 may be formed on the first pixel defining layer 190.The connection hole 1901, the connection wire 200, and the second pixeldefining layer 191 will be described in detail below.

A common electrode 730 may be formed on the organic emission layer 720and the first and second pixel defining layers 190 and 191. Thereby, theorganic light emitting element 71 including the pixel electrode 710, theorganic emission layer 720, and the common electrode 730 may be formed.The organic emission layer 720 may be formed of a low molecular organicmaterial or a high molecular organic material, and may be formed as aplurality of organic layers including an emission layer. The pixelelectrode 710 and the common electrode 730 may be respectively formed ofa transparent conductive material or may be formed of a semitransparentor reflective conductive material. The OLED display 100 may be a topemission type, a bottom emission type, or a double-sided emission typeaccording to the kind of the materials that form the first electrode 710and the second electrode 730. Such a configuration of the organic lightemitting element 70 may be variously modified.

At least one of the plurality of pixel areas of the OLED display 100 mayinclude the connection wire 200 electrically connected with aneighboring pixel area. That is, a defective pixel having an emissionproblem in a pixel area may be produced during a manufacturing processof the OLED display 100. The defective pixel may be noticeable as a darkspot in the completed OLED display 100 if the defective pixel is notrepaired during the manufacturing process. Herein, the term “defectivepixel” may refer to a pixel that functions to emit light when providedwith a driving signal, but for various reasons, such as a defect in acorresponding transistor or signal line, does not receive the normaldriving signal. Thus, the defective pixel may be driven to emit light byelectrically connecting the pixel with a normal pixel adjacent thereto,thereby repairing the defective pixel for normal operation according toa signal transmitted to the normally operating pixel.

In FIG. 1 and FIG. 2, the pixel area having the defect is indicated byreference numeral 70′ (hereinafter, referred to as a “defective pixel”)and a normal pixel area adjacent to the defective pixel is indicated byreference numeral 70 (hereinafter, referred to as a “normal pixel”). Inaddition, a pixel terminal of the defective pixel is indicated byreference numeral 711′, and a pixel terminal of the adjacent normalpixel is indicated by reference numeral 711.

As shown in FIG. 2, the first pixel defining layer 190 may includeconnection holes 1901 that expose the pixel terminal 711′ of thedefective pixel 70′ and the pixel terminal 711 of the normal pixel 70.The connection wire 200 that connects the pixel terminal 711′ of thedefective pixel 70′ and the pixel terminal 711 of the normal pixel 70through the connection holes 1901 may be formed on the first pixeldefining layer 190. The connection wire 200 may include at least onematerial selected from tungsten (W), chromium (Cr), molybdenum (Mo),aluminum (Al), titanium (Ti), and tantalum (Ta), or may include an alloythereof.

In the defective pixel 70′, the pixel terminal 711′ and the thin filmtransistor 20 are disconnected. In further detail, the pixel terminal711′ of the defective pixel 70′ is manufactured to include an electricconnection with the drain electrode 178 of the second thin filmtransistor 20 through the contact hole 182 of the protection insulatinglayer 180. Accordingly, in order to block the application of a defectivesignal to an organic light emitting element of the defective pixel 70 a,a cutting portion CT may be formed in the drain electrode 177 betweenthe pixel terminal 711′ and the second thin film transistor 20′. Thecutting portion CT in the present exemplary embodiment may be formed ata portion where the drain electrode 178 is connected with the pixelterminal 711′ and at a portion where the drain electrode 178 is notconnected with the pixel terminal 711′. In further detail, the cuttingportion CT may be formed as a hole that separates the drain electrode178, as described above, while penetrating to the drain electrode 178from the first pixel defining layer 190. The configuration of thecutting portion CT can be modified in various suitable configurations toblock a signal applied to the defective pixel 70′ from the second thinfilm transistor 20.

The second pixel defining layer 191 may be formed on the first pixeldefining layer 190 to cover the connection wire 200. Like the firstpixel defining layer 190, the second pixel defining layer 191 mayinclude a second opening 193 that exposes the pixel electrode 710. Inaddition, the second pixel defining layer 191 may be formed tothoroughly fill the connection hole 1901 and the cutting portion CTformed in the first pixel defining layer 190.

Like the first pixel defining layer 190, the second pixel defining layer191 may be formed of various organic or inorganic materials, and, forexample, may be formed by patterning a photosensitive organic layer andthermally or optically baking the patterned photosensitive organiclayer.

With such a configuration, the defective pixel 70′ may operate by thesame signal as the normal signal applied to the normal pixel 70. In theOLED display 100, although the defective pixel 70′ is generated due to afailure in a thin film transistor in one pixel area, the defective pixel70′ may emit light together with the adjacent normal pixel 70 by anormal signal applied through the normal pixel 70.

Accordingly, in the OLED display 100 according to the present exemplaryembodiment, the defective pixel generated during the manufacturingprocess may not appear as a dark spot.

Hereinafter, a method for recovering a defective pixel in amanufacturing process of the OLED display according to the exemplaryembodiment will be described with reference to FIG. 3A to FIG. 3D.

FIG. 3A to FIG. 3D are cross-sectional views of a process for recoveringthe failure in the manufacturing process of the OLED display accordingto the exemplary embodiment, taken along the line of FIG. 1.

As shown in FIG. 3A, the wire portion 210 (refer to FIG. 2) may beformed on the substrate 110. The pixel electrode 710 (refer to FIG. 2)and the pixel terminals 711 and 711′ extended from the pixel electrode710 and contacting the drain electrode 178 may be formed on the wireportion 210. The pixel defining layer 190 covering the pixel terminals711 and 711′ and having the plurality of first openings 192 (refer toFIG. 2) that expose the pixel electrode 710 may be formed.

After the first pixel defining layer 190 is formed, the plurality ofpixel areas are tested to detect a defective pixel 70′. In order todetect the defective pixel 70′, various testing methods, such as, forexample, an auto optical inspection, an array test, and the like, may beperformed.

Subsequently, as shown in FIG. 3B, the connection hole 1901 may beformed to expose the pixel terminal 711′ of the defective pixel 70′ andthe pixel terminal 711 of the normal pixel 70 that is adjacent to thepixel terminal 711′. The connection hole 1901 may be formed bypatterning a photosensitive organic layer. The connection hole 1901 mayhave any size that can establish electrical contact between the pixelterminals 711 and 711′.

In addition, in order to block a signal applied to the pixel terminal711′, the cutting portion CT (refer to FIG. 3 c) may be formed using alaser L to separate the drain electrode 177 of the defective pixel 70′.

Subsequently, as shown in FIG. 3C, the connection wire 200 electricallyconnecting the pixel terminals 711 and 711′ may be formed. Theconnection wire 200 may be formed to directly contact the pixelterminals 711 and 711′ through the connection hole 1901 on the firstpixel defining layer 190. The connection wire 200 may be formed throughdeposition of at least one selected from tungsten (W), chromium (Cr),molybdenum (Mo), aluminum (Al), titanium (Ti), and tantalum (Ta) or analloy thereof using a chemical vapor deposition (CVD) method. Forexample, a CVD wiring method using tungsten (W) may be used. The formingof the connection wire 200 may be variously modified in various suitableconfigurations.

Subsequently, as shown in FIG. 3D, the second pixel defining layer 191may be formed on the first pixel defining layer 190 to cover theconnection wire 200. Like the first pixel defining layer 190, the secondpixel defining layer 191 may be formed throughout the pixel areaexcluding an area of the second opening 193 (refer to FIG. 2) thatexposes the pixel electrode 710 (refer to FIG. 2). However, the secondpixel defining layer 191 may be formed in any area as long as the secondpixel defining layer 191 covers the connection wire 200.

According to the manufacturing method of the OLED display including thefailure recovering method, a failure occurring during the manufacturingprocess of the OLED display may be easily recovered. Therefore, thenumber of dark spots in the OLED display may be reduced, and a productyield of the OLED display may be improved.

Hereinafter, an OLED display 100′ according to a second exemplaryembodiment will be described with reference to FIG. 4.

FIG. 4 is a cross-sectional view of a part of the OLED display accordingto this exemplary embodiment, corresponding to the cross-section of FIG.1, taken along the like II-II.

As shown in FIG. 4, in the OLED display 100′ according to this exemplaryembodiment, a second pixel defining layer 191′ may be formed onlybetween a pixel terminal 711′ of a defective pixel 70′ and a pixelterminal 711 of a normal pixel 70. That is, in this exemplaryembodiment, a first pixel defining layer 190′ has a first portion 1902formed in a connection hole 1901′ and a second portion 1903 that isdifferent from the first portion 1902 and has a step. Here, the firstportion 1902 and the second portion 1903 are separated from each other,and the second pixel defining layer 191′ has a first portion 1902 thatis relatively thinner than the second portion 1902.

Here, the second pixel defining layer 191′ fills the connection hole1901′ over the connection wire 200 such that an upper side of the secondpixel defining layer 191′ substantially corresponds to an upper side ofthe first pixel defining layer 190′.

Meanwhile, the OLED display 100′ according to this exemplary embodimentis substantially equivalent to the OLED display 100 according to theexemplary embodiment, excluding that the second pixel defining layer191′ may be formed only between the pixel terminal 711′ of the defectivepixel 70′ and the pixel terminal 711 of the normal pixel 70.

By way of summation and review, an OLED display may incur a defectduring a stage of a manufacturing process, such that a dark spot may bepresent at a pixel. Typically, a pixel having the defect cannot beeasily repaired during the manufacturing process.

Thus, when a display device having a defect in a pixel is provided to auser, the defective pixel is recognized as a dark spot by a user suchthat user satisfaction may be degraded. Although a pixel having a defectmay be detected during the manufacturing process, it may not be possibleto repair the pixel, and thus, the OLED display including the pixel maybe discarded, causing economical and environmental problems.

The described embodiments may provide an organic light emitting diode(OLED) display that may reduce the number of dark spots by enabling therepair of a defect occurring during a manufacturing process. Further,the described embodiments may provide a method for manufacturing an OLEDdisplay that may improve a product yield by simply recovering a failurethat may occur during a manufacturing process. Accordingly, usersatisfaction may be improved. In addition, according to the exemplaryembodiments, the product yield of the OLED display may be improved, andthus, productivity may be improved. OLED displays having defectivepixels may not need to be discarded, and accordingly, an environmentproblem may be prevented.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of ordinary skill in the art asof the filing of the present application, features, characteristics,and/or elements described in connection with a particular embodiment maybe used singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwisespecifically indicated. Accordingly, it will be understood by those ofskill in the art that various changes in form and details may be madewithout departing from the spirit and scope of the present invention asset forth in the following claims.

What is claimed is:
 1. An organic light emitting diode (OLED) display, comprising: a substrate having a plurality of pixels; a first pixel defining layer on the substrate, the first pixel defining layer dividing the plurality of pixels; a connection wire on the first pixel defining layer, the connection wire electrically connecting two adjacent pixels; and a second pixel defining layer on the first pixel defining layer, the second pixel defining layer covering the connection wire.
 2. The OLED display of claim 1, wherein: each of the plurality of pixels includes a pixel electrode and a pixel terminal extending from the pixel electrode, and the first pixel defining layer includes one or more connection holes exposing respective pixel terminals of the two adjacent pixels.
 3. The OLED display of claim 2, wherein the connection wire electrically connects the two adjacent pixels through the connection holes.
 4. The OLED display of claim 1, wherein: one of the two adjacent pixels is a defective pixel and the another one of the two adjacent pixels is a normal pixel, and the defective pixel is driven by a signal applied to the normal pixel.
 5. The OLED display of claim 4, wherein: a plurality of thin film transistors are provided between the substrate and each pixel terminal to supply a signal for driving each pixel, the normal pixel of the two adjacent pixels is electrically connected with a respective one of the thin film transistors corresponding to the normal pixel, and the defective pixel of the two adjacent pixels is electrically disconnected from a respective one the thin film transistors corresponding to the defective pixel.
 6. The OLED display of claim 1, wherein the connection wire includes at least one of tungsten, chromium, molybdenum, aluminum, titanium, and tantalum, or an alloy thereof.
 7. The OLED display of claim 2, wherein: the first pixel defining layer includes a plurality of first openings to expose each the pixel electrode, and the second pixel defining layer includes a plurality of second openings to expose each pixel electrode.
 8. The OLED display of claim 2, wherein the second pixel defining layer is disposed to fill the connection holes.
 9. The OLED display of claim 2, wherein the second pixel defining layer is disposed between pixel terminals of the two adjacent pixels.
 10. The OLED display of claim 9, wherein: pixel terminals of the two adjacent pixels are exposed through a single connection hole, and the first pixel defining layer includes a first portion formed in a connection hole and a second portion relatively thicker than the first portion.
 11. The OLED display of claim 10, wherein: the second pixel defining layer covers the first portion, and an upper side of the second pixel defining layer and an upper side of the second portion of the first pixel defining layer correspond to each other.
 12. A manufacturing method of an organic light emitting diode (OLED) display, the manufacturing method comprising: forming a plurality of pixels and a plurality of thin film transistors electrically connected to the plurality of pixels, respectively, on a substrate; forming a first pixel defining layer dividing the plurality of pixels; detecting a defective pixel by testing the plurality of pixels; disconnecting an electrical connection between the defective pixel and a respective one of the thin film transistors; forming a connection wire for electrical connection between the defective pixel and a pixel adjacent to the defective pixel; and forming a second pixel defining layer on the first pixel defining layer to cover the connection wire.
 13. The manufacturing method of the OLED display of claim 12, wherein: the pixels respectively include pixel electrodes and pixel terminals extended from the pixel electrodes, and the thin film transistors are electrically connected with the pixel terminals.
 14. The manufacturing method of the OLED display of claim 13, wherein the forming of the connection wire includes forming a connection hole by removing a portion of the first pixel defining layer to expose the defective pixel and the pixel terminal of the pixel that is adjacent to the defective pixel.
 15. The manufacturing method of the OLED display of claim 14, wherein the forming of the connection wire includes connecting the pixel terminal of the defective pixel and the pixel terminal of the pixel that is adjacent to the defective pixel with the connection wire through the connection hole.
 16. The manufacturing method of the OLED display of claim 12, wherein the forming of the connection wire includes depositing at least one of tungsten, chromium, molybdenum, aluminum, titanium, and tantalum, or an alloy thereof using a chemical vapor deposition method.
 17. The manufacturing method of the OLED display of claim 12, wherein the disconnecting the electrical connection between the defective pixel and the respective one of the thin film transistors includes cutting the electrical connection using a laser.
 18. The manufacturing method of the OLED display of claim 12, wherein: each thin film transistor includes a semiconductor layer, a source electrode, and a drain electrode, the source electrode and the drain electrodes contacting the semiconductor layer, and the disconnecting of the electrical connection between the defective pixel and the respective one of the thin film transistors includes cutting the source electrode or the drain electrode. 